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PRELIMINARY DATA SHEET
N-CHANNEL GaAs HJ-FET
NE6510379A
3 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.
FEATURES
* GaAs HJ-FET Structure * High Output Power * High Linear Gain : PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty PO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty : GL = 13 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 duty GL = 8 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = 0 dBm, 1/3 duty * High Power Added Efficiency: 58% typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty 52% typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty
ORDERING INFORMATION (PLAN)
Part Number NE6510379A-T1 79A Package Supplying Form 12 mm tape width, 1 kpcs/reel
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE6510379A)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Forward Current Gate Reverse Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGSO ID IGF IGR PT Tch Tstg Ratings 6 -4 4.2 38 38 18 150 -65 to +150 Unit V V A mA mA W C C
Caution
Please handle this device at static-free workstation, because this is an electrostatic sensitive device.
The information in this document is subject to change without notice.
Document No. P13677EJ1V0DS00 (1st edition) Date Published August 1998 N CP(K) Printed in Japan
(c)
1998
NE6510379A
RECOMMENDED OPERATING LIMITS
Characteristics Drain to Source Voltage Operating Duty Cycle Gain Compression Channel Temperature Symbol VDS - Gcomp Tch Pulse width = 0.577 ms Test Conditions MIN. TYP. 3.5 MAX. 4.2 1/3 5.0 +110 Unit V - dB C
ELECTRICAL CHARACTERISTICS
(TA = 25C, Unless otherwise specified, using NEC standard test fixture. All RF characteristics is measured at 1/3 duty pulse operation, pulse width = 0.577 ms at 4.616 ms/frame)
Characteristics Saturated Drain Current Pinch-off Voltage Gate to Drain Break Down Voltage Thermal Resistance Output Power Drain Current Power Added Efficiency Linear Gain
Note 1
Symbol IDSS Vp BVgd
Test Conditions VDS = 2.5 V, VGS = 0 V VDS = 2.5 V, ID = 21 mA Igd = 21 mA
MIN.
TYP. 3.7
MAX.
Unit A
-2.0 11
-0.4
V V
Rth PO ID
Channel to Case f = 1.9 GHz, VDS = 3.5 V Pin = +26 dBm, Rg = 100 IDset = 200 mA (RF OFF) Note 2 31.5
4 32.5 760 44 52 8.0
7
C/W dBm mA % dB
add
GL
Notes 1. Pin = 0 dBm 2. DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples.
TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED)
(TA = 25C, Unless otherwise specified, using NEC standard test fixture. All RF characteristics is measured at 1/3 duty pulse operation, pulse width = 0.577 ms at 4.616 ms/frame)
Characteristics Output Power Drain Current Power Added Efficiency Linear Gain
Note
Symbol PO ID
Test Conditions f = 900 MHz, VDS = 3.5 V Pin = +24 dBm, Rg = 100 IDset = 200 mA (RF OFF)
MIN.
TYP. 35.0 1.40 58 13.0
MAX.
Unit dBm A % dB
add
GL
Note Pin = 0 dBm
2
Preliminary Data Sheet
NE6510379A
NE6510379A S-PARAMETERS TEST CONDITIONS: VDS = 3.5 V, IDset = 200 mA (Preliminary Data)
S11 freq. (MHz) 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 MAG. 0.958 0.956 0.954 0.956 0.953 0.952 0.951 0.949 0.949 0.952 0.954 0.945 0.947 0.949 0.946 0.947 0.949 ANG. (deg.) 178.7 178.1 177.1 176.0 175.3 174.4 173.9 173.2 172.2 170.6 169.4 168.3 166.9 165.0 163.5 161.2 160.1 MAG. 1.601 1.374 1.210 1.087 0.966 0.869 0.818 0.747 0.694 0.656 0.625 0.584 0.595 0.570 0.515 0.505 0.479 S21 ANG. (deg.) 91.9 91.8 90.7 90.8 89.9 89.7 89.5 88.9 89.7 90.0 88.9 90.7 89.0 86.1 86.3 85.2 92.7 MAG. 0.017 0.017 0.017 0.017 0.018 0.018 0.018 0.019 0.020 0.020 0.020 0.021 0.022 0.022 0.022 0.022 0.023 S12 ANG. (deg.) 23.4 26.2 29.7 33.6 36.6 41.0 43.9 45.9 47.4 50.2 53.1 56.1 57.9 60.3 61.6 64.2 67.0 MAG. 0.848 0.847 0.845 0.846 0.847 0.848 0.849 0.848 0.846 0.846 0.844 0.844 0.844 0.846 0.846 0.846 0.842 S22 ANG. (deg.) 177.3 176.6 176.1 175.3 174.6 173.8 172.9 172.1 171.3 170.4 169.6 168.5 167.4 166.1 164.9 163.7 162.1
Preliminary Data Sheet
3
NE6510379A
APPLICATION CIRCUIT EXAMPLE
f = 1.9 GHz (Unit: mm)
VGS VDS
Rg Tantalum Condenser 47 F 1000 p Tantalum Condenser 100 F
/4 OPEN STUB
5 2 5 C1 3 INPUT 3 3 3 4.5 4 30
/4 LINE
5 16 5 18 2
/4 OPEN STUB
10.5
50 LINE 3 30.9
5
2
5
5
OUTPUT C2
10 3
10 3
3
2
GND f = 1.9 GHZ VDS = 3.5 V IDset = 200 mA (RF OFF) C1 = 30 pF C2 = 30 pF Rg = 100 Substrate: Teflon glass ( r = 2.6) t = 0.8 mm
APPLICATION CIRCUIT EXAMPLE
f = 900 MHz (Unit: mm)
VGS VDS
Rg Tantalum Condenser 47 F 1000 p Tantalum Condenser 100 F
/4 OPEN STUB /4 LINE
/4 OPEN STUB
2
5 C1
5 3 C4 C5 3 3 3 2.5 4.5
7 1 R1 C3 2
7 3
50 LINE 3 3 20 7 2.5 3
5
5
C6 C7 5 3
C8 C9 33
C2 OUTPUT
INPUT 26
f = 900 MHZ VDS = 3.5 V IDset = 200 mA (RF OFF)
C1 = 30 pF
C6 = 2 pF C7 = 8 pF C2 = 30 pF C3 = 1000 pF C8 = 8 pF C9 = 3 pF C4 = 2 pF C5 = 3 pF
R1 = 270 Rg = 100
GND Substrate: Teflon glass ( r = 2.6) t = 0.8 mm
4
Preliminary Data Sheet
NE6510379A
79A Package Dimensions (Unit: mm)
1.5 0.2 4.2 max. Source Source
Gate
Drain
Gate
Drain
5.7 max.
1.0 max.
0.6 0.15
0.4 0.15 5.7 max.
0.8 0.15
4.4 max.
0.8 max. 3.6 0.2
0.9 0.2
0.2 0.1
Bottom View
79A Package Recommended P.C.B. Layout (Unit: mm)
4.0 1.7 Stop up the hole with a rosin or something to avoid solder flow.
Drain
Gate
5.9
1.2
Source through hole 0.2 x 33 0.5 0.5
0.5
6.1
Preliminary Data Sheet
1.0
1.2 max.
5
NE6510379A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative.
Recommended Condition Symbol IR35-00-2
Soldering Method Infrared Reflow
Soldering Conditions Package peak temperature: 235C or below Time: 30 seconds or less (at 210C) Note Count: 2, Exposure limit : None Pin temperature: 260C Time: 5 seconds or less (per pin row) Note Exposure limit : None
Partial Heating
-
Note After opening the dry pack, keep it in a place below 25C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating).
6
Preliminary Data Sheet
NE6510379A
[MEMO]
Preliminary Data Sheet
7
NE6510379A
Caution
The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5

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